Growth study of chemical beam epitaxy of GaN , P , _ - x using NH 3 and tertiarybutylphosphine
نویسنده
چکیده
A study in the growth of GaN,P, _s epilayers by chemical beam epitaxy using tertiarybutylphosphine (TBP), ammonia (NH3), and elemental Ga or triethylgallium is reported. Monitoring reflection high-energy/ electron diffraction (RHEED) intensity oscillations, we observe that both group-IIIand group-V-induced incorporation rates are increased when NH3 is introduced into a single cracker with TBP. From the difference in the periods of group-V-induced RHEED intensity oscillations, a 16% N incorporation is expected, but X-ray rocking curve measurement shows only 0.08% N. Using separate TBP and NH, crackers results in no enhancement in incorporation rates. We conclude that the cracking efficiency of TBP is increased with NH 3 co-injection.
منابع مشابه
Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals
We will present a comparison between GaN grown on cand r-plane sapphire by gas-source molecular beam epitaxy (GSMBE) using solid source elemental Ga with untracked ammonia (NH,). Improved GaN film quality was found for samples grown at substrate temperatures above 700°C with optimized temperatures at 780°C. GaN deposited on a low-temperature ( 350°C) GaN buffer layer grown using an if-plasma ra...
متن کاملIon-assisted nucleation and growth of GaN on sapphire„0001..
We have performed a real-time x-ray scattering study of the nucleation of GaN on sapphire~0001! by gas-source molecular-beam epitaxy. GaN growth using thermal ammonia and Ga~C2H5!3 exhibited a rapidly decaying intensity at the 0001 reflection, characteristic of three-dimensional cluster growth. Growth with 30-eV NHx 1 ions and Ga~C2H5!3 exhibited layer-by-layer intensity oscillations with maxim...
متن کاملAn evaluation of alternative precursors in chemical beam epitaxy: tris-dimethylaminoarsenic, tris-dimethylaminophosphorus, and tertiarybutylphosphine
In this paper we evaluate the use of tris-dimethylaminoarsenic (TDMAAs), tris-dimethylaminophosphorus (TDMAP). and tertiarybutylphosphine (TBP) as safer alternative sources in CBE. TDMAAs is a viable alternative to arsine for growing GaAs. When In-containing compounds were grown using uncracked TDMAAs or TDMAP with trimethylindium, indiumenhanced TDMAP or TDMAAs desorption was observed. resulti...
متن کاملGrowth and characterization of light emitting ZnS/GaN heterostructures
Heterostructures involving ZnS/GaN show promise for the injection of holes from p-GaN into n-ZnS. Utilizing knowledge obtained from ZnS phosphor technology, this combination could result in a new type of multi-color electroluminescent display. Further, this combination provides a very interesting interface. Both ZnS and GaN are very ionic materials. Hence, it is desirable that the interface wil...
متن کاملStructural characterization of GaN and GaAsxN1-x grown by electron cyclotron resonance-metalorganic molecular beam epitaxy
Electron cyclotron resonance-metalorganic molecular beam epitaxy has been used to deposit GaN and GaAsxN [_ x layers on various substrates. This paper will report on the structural characterization of this material, as measured by x-ray diffraction and cross-sectional transmission electron microscopy. GaAsxN1x layers grown on GaAs appear to be cubic while those grown on GaP are surprisingly hex...
متن کامل